Infineon ISC010N04NM6 Type N-Channel MOSFET, 40 A, 40 V, 8-Pin TDSON ISC010N04NM6ATMA1
- RS Stock No.:
- 228-6560
- Mfr. Part No.:
- ISC010N04NM6ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD16.63
(exc. GST)
SGD18.125
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 9,960 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD3.326 | SGD16.63 |
| 10 - 95 | SGD3.048 | SGD15.24 |
| 100 - 245 | SGD2.818 | SGD14.09 |
| 250 - 495 | SGD2.616 | SGD13.08 |
| 500 + | SGD2.542 | SGD12.71 |
*price indicative
- RS Stock No.:
- 228-6560
- Mfr. Part No.:
- ISC010N04NM6ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | ISC010N04NM6 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.35mm | |
| Width | 1.2 mm | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series ISC010N04NM6 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.35mm | ||
Width 1.2 mm | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Automotive Standard No | ||
The Infineon ISC010N04NM6 is optiMOSTM 6 power MSOFET 40V normal level, The Infineon offers a benchmark solution for normal level required applications such as battery-powered applications, battery-powered tools, battery management, and low voltage drives. A higher Vth for the normal level portfolio means that only larger gate voltage spikes would cause an unwanted turn-on.
N-channel enhancement mode
Normal level gate threshold is 2.3 V typical
MSL1 up to 260°C peak reflow
175°C junction temperature
Related links
- Infineon ISC010N04NM6 Type N-Channel MOSFET 40 V, 8-Pin TDSON
- Infineon BSC0 Type N-Channel MOSFET 40 V, 8-Pin TDSON
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC019N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC017N04NM5ATMA1
- Infineon BSC0 Type N-Channel MOSFET 40 V, 8-Pin TDSON BSC007N04LS6ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC058N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC028N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC036N04NM5ATMA1