Infineon IPP016N08NF2S Type N-Channel MOSFET, 35 A, 80 V, 3-Pin TO-220
- RS Stock No.:
- 228-6536
- Mfr. Part No.:
- IPP016N08NF2SAKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 1000 units)*
SGD2,867.00
(exc. GST)
SGD3,125.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 20 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 1000 - 1000 | SGD2.867 | SGD2,867.00 |
| 2000 - 2000 | SGD2.756 | SGD2,756.00 |
| 3000 + | SGD2.722 | SGD2,722.00 |
*price indicative
- RS Stock No.:
- 228-6536
- Mfr. Part No.:
- IPP016N08NF2SAKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IPP016N08NF2S | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Height | 9.45mm | |
| Width | 4.57 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IPP016N08NF2S | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Height 9.45mm | ||
Width 4.57 mm | ||
Automotive Standard No | ||
The Infineon IPP016N08NF2S is the N channel power MOSFET. The drain source voltage of this mosfet is the 80 V. It supports a wide variety of applications and standard pinout allows for drop-in replacement. This mosfet have increased current carrying capability.
Optimized for a wide range of applications
N-channel, normal level
100% avalanche tested
Related links
- Infineon IPP016N08NF2S Type N-Channel MOSFET 80 V, 3-Pin TO-220 IPP016N08NF2SAKMA1
- Infineon IPP60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon IPP60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R060C7XKSA1
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IRFB4615PBF
- Infineon IPP040N08NF2S Type N-Channel MOSFET 80 V, 3-Pin TO-220
- Infineon IPP024N08NF2S Type N-Channel MOSFET 80 V, 3-Pin TO-220
- Infineon IPP019N08NF2S Type N-Channel MOSFET 80 V, 3-Pin TO-220