Vishay TrenchFET Type N-Channel MOSFET, 500 A, 30 V Enhancement, 4-Pin SO-8 SQJ126EP-T1_GE3
- RS Stock No.:
- 228-2950
- Mfr. Part No.:
- SQJ126EP-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD10.59
(exc. GST)
SGD11.545
(inc. GST)
Add 85 units to get free delivery
Supply shortage
- Plus 2,990 left, shipping from 16 February 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD2.118 | SGD10.59 |
| 50 - 95 | SGD1.796 | SGD8.98 |
| 100 - 245 | SGD1.57 | SGD7.85 |
| 250 - 995 | SGD1.528 | SGD7.64 |
| 1000 + | SGD1.496 | SGD7.48 |
*price indicative
- RS Stock No.:
- 228-2950
- Mfr. Part No.:
- SQJ126EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 500A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.94mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 101nC | |
| Maximum Power Dissipation Pd | 500W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 500A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.94mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 101nC | ||
Maximum Power Dissipation Pd 500W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel is 30 V power MOSFET.
100 % Rg and UIS tested
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