Vishay E Type N-Channel MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3
- RS Stock No.:
- 228-2849
- Mfr. Part No.:
- SIHD11N80AE-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD12.61
(exc. GST)
SGD13.745
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 1,995 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD2.522 | SGD12.61 |
| 50 - 95 | SGD2.138 | SGD10.69 |
| 100 - 245 | SGD1.758 | SGD8.79 |
| 250 - 995 | SGD1.69 | SGD8.45 |
| 1000 + | SGD1.464 | SGD7.32 |
*price indicative
- RS Stock No.:
- 228-2849
- Mfr. Part No.:
- SIHD11N80AE-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | E | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 78W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series E | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 78W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Related links
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SIHD6N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247