Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3

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Subtotal (1 pack of 25 units)*

SGD19.90

(exc. GST)

SGD21.70

(inc. GST)

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Units
Per unit
Per Pack*
25 - 25SGD0.796SGD19.90
50 - 75SGD0.716SGD17.90
100 - 225SGD0.645SGD16.13
250 - 975SGD0.58SGD14.50
1000 +SGD0.522SGD13.05

*price indicative

Packaging Options:
RS Stock No.:
228-2835
Mfr. Part No.:
SIA938DJT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SC-70

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

7.8W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Gate Source Voltage Vgs

12 V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel MOSFET provides exceptional versatility for power management design.

Very low RDS(on) and excellent RDS x Qg

Figure-of-Merit (FOM) in an ultra compact

package footprint

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