Vishay E Type N-Channel Power MOSFET, 4.4 A, 800 V, 3-Pin TO-220AB SIHP5N80AE-GE3
- RS Stock No.:
- 225-9919
- Mfr. Part No.:
- SIHP5N80AE-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
SGD13.00
(exc. GST)
SGD14.20
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 1,050 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.30 | SGD13.00 |
| 20 - 20 | SGD1.275 | SGD12.75 |
| 30 - 40 | SGD1.183 | SGD11.83 |
| 50 + | SGD1.085 | SGD10.85 |
*price indicative
- RS Stock No.:
- 225-9919
- Mfr. Part No.:
- SIHP5N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-220AB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.65mm | |
| Standards/Approvals | RoHS | |
| Length | 10.52mm | |
| Height | 15.85mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-220AB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.65mm | ||
Standards/Approvals RoHS | ||
Length 10.52mm | ||
Height 15.85mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 4.4A Maximum Continuous Drain Current - SIHP5N80AE-GE3
This power MOSFET is a high-voltage switching transistor designed for use in power-conversion and control systems. It functions as an N-channel device capable of handling elevated drain-source voltages, intended for surface-mounted applications where robust thermal and electrical performance is required.
Features and Benefits:
• 800V drain-source rating enables high-voltage switching applications
• 4.4A continuous drain current permits moderate load handling
• 1.35Ω Rds(on) reduces conduction losses at operating current
• 62.5W power dissipation supports sustained power cycling
• 30V gate tolerance allows wide gate-drive margins
• 16.5nC typical gate charge aids predictable switching behaviour
• 4.4A continuous drain current permits moderate load handling
• 1.35Ω Rds(on) reduces conduction losses at operating current
• 62.5W power dissipation supports sustained power cycling
• 30V gate tolerance allows wide gate-drive margins
• 16.5nC typical gate charge aids predictable switching behaviour
Applications
• Suitable for switch-mode power supplies handling high DC rails
• Ideal for industrial motor-drive front-end switching stages
• Used for high-voltage snubber or clamp circuits in power systems
• Can be used for isolated boost-converter switches in automation
• Ideal for industrial motor-drive front-end switching stages
• Used for high-voltage snubber or clamp circuits in power systems
• Can be used for isolated boost-converter switches in automation
What thermal range can the device operate within?
It functions between -55°C and 150°C, allowing use across wide environmental temperatures.
How is mounting handled for PCB assembly?
The package is a TO-220AB surface-mount type with three pins for through-board or heatsink attachment options.
What gate-drive considerations should I note?
The gate-source rating is 30V, so gate drivers should limit excursions within that threshold to prevent damage.
How large is the typical gate-drive energy impact?
The device exhibits a typical gate charge of 16.5nC, which informs driver sizing and switching-loss calculations.
Related links
- Vishay E Type N-Channel MOSFET 800 V, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 800 V, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V, 3-Pin TO-263 SIHB5N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220