ROHM Dual 2 Type P-Channel MOSFET, 3.5 A, 40 V Enhancement, 7-Pin DFN UT6JB5TCR
- RS Stock No.:
- 223-6395
- Mfr. Part No.:
- UT6JB5TCR
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD14.275
(exc. GST)
SGD15.55
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 21 May 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.571 | SGD14.28 |
| 50 - 75 | SGD0.56 | SGD14.00 |
| 100 - 225 | SGD0.40 | SGD10.00 |
| 250 - 975 | SGD0.392 | SGD9.80 |
| 1000 + | SGD0.294 | SGD7.35 |
*price indicative
- RS Stock No.:
- 223-6395
- Mfr. Part No.:
- UT6JB5TCR
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.22Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.65mm | |
| Width | 2 mm | |
| Length | 2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.22Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.65mm | ||
Width 2 mm | ||
Length 2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM power MOSFET has DFN2020-8D package type. It is mainly used for switching.
Low on - resistance
Small surface mount package
Pb-free plating, RoHS compliant
Halogen free
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