Infineon OptiMOS-TM3 Type N-Channel MOSFET, 63 A, 60 V Enhancement, 8-Pin TSDSON BSZ068N06NSATMA1

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Subtotal (1 pack of 15 units)*

SGD20.655

(exc. GST)

SGD22.515

(inc. GST)

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Per Pack*
15 - 15SGD1.377SGD20.66
30 - 75SGD1.296SGD19.44
90 - 225SGD1.194SGD17.91
240 - 465SGD1.105SGD16.58
480 +SGD1.06SGD15.90

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Packaging Options:
RS Stock No.:
222-4629
Mfr. Part No.:
BSZ068N06NSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

60V

Package Type

TSDSON

Series

OptiMOS-TM3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

17nC

Maximum Power Dissipation Pd

46W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.35mm

Standards/Approvals

No

Height

1.2mm

Width

6.1 mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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