Infineon HEXFET Type N-Channel MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 222-4611
- Mfr. Part No.:
- AUIRFP4568
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 tube of 25 units)*
SGD341.675
(exc. GST)
SGD372.425
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 1,075 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 50 | SGD13.667 | SGD341.68 |
| 75 - 100 | SGD13.256 | SGD331.40 |
| 125 - 225 | SGD12.859 | SGD321.48 |
| 250 - 475 | SGD12.473 | SGD311.83 |
| 500 + | SGD12.099 | SGD302.48 |
*price indicative
- RS Stock No.:
- 222-4611
- Mfr. Part No.:
- AUIRFP4568
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 171A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 517W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.31mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 171A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 517W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.31mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
Related links
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-247 AUIRFP4568
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-247
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-247 AUIRFP4568-E
- Infineon HEXFET Type N-Channel Power MOSFET 150 V Enhancement, 3-Pin TO-247AC
- Infineon HEXFET Type N-Channel Power MOSFET 150 V Enhancement, 3-Pin TO-247AC IRFP4568PBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-247 IRFP4321PBF