DiodesZetex DMP Type P-Channel MOSFET, 500 mA, 20 V Enhancement, 3-Pin SOT-523 DMP2900UT-7
- RS Stock No.:
- 222-2856
- Mfr. Part No.:
- DMP2900UT-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD20.60
(exc. GST)
SGD22.45
(inc. GST)
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In Stock
- Plus 2,500 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | SGD0.412 | SGD20.60 |
| 100 - 200 | SGD0.371 | SGD18.55 |
| 250 - 450 | SGD0.334 | SGD16.70 |
| 500 - 950 | SGD0.301 | SGD15.05 |
| 1000 + | SGD0.27 | SGD13.50 |
*price indicative
- RS Stock No.:
- 222-2856
- Mfr. Part No.:
- DMP2900UT-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMP | |
| Package Type | SOT-523 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.32W | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 1.7mm | |
| Width | 0.85 mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMP | ||
Package Type SOT-523 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.32W | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 1.7mm | ||
Width 0.85 mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex P-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
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