DiodesZetex Dual DMN Type N-Channel MOSFET, 4.6 A, 20 V Enhancement, 6-Pin TSOT-26 DMN2053UVTQ-7
- RS Stock No.:
- 222-2827
- Mfr. Part No.:
- DMN2053UVTQ-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD9.95
(exc. GST)
SGD10.85
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 2,800 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.398 | SGD9.95 |
| 50 - 75 | SGD0.358 | SGD8.95 |
| 100 - 225 | SGD0.322 | SGD8.05 |
| 250 - 975 | SGD0.29 | SGD7.25 |
| 1000 + | SGD0.261 | SGD6.53 |
*price indicative
- RS Stock No.:
- 222-2827
- Mfr. Part No.:
- DMN2053UVTQ-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN | |
| Package Type | TSOT-26 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.035Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 3.6nC | |
| Maximum Power Dissipation Pd | 1.1W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN | ||
Package Type TSOT-26 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.035Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 3.6nC | ||
Maximum Power Dissipation Pd 1.1W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex dual N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Related links
- DiodesZetex Dual DMN Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOT-26
- DiodesZetex Dual DMN Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 DMN33D8LDWQ-7
- DiodesZetex Dual DMN Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363 DMN62D4LDW-7
- DiodesZetex Dual DMN Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363 DMN66D0LDWQ-7