onsemi NTMFS005N Type N-Channel MOSFET, 105 A, 100 V Enhancement, 5-Pin DFN NTMFS005N10MCLT1G
- RS Stock No.:
- 221-6720
- Mfr. Part No.:
- NTMFS005N10MCLT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD22.04
(exc. GST)
SGD24.02
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Limited stock
- Plus 1,380 left, shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD2.204 | SGD22.04 |
| 20 - 90 | SGD2.02 | SGD20.20 |
| 100 - 240 | SGD1.862 | SGD18.62 |
| 250 - 490 | SGD1.73 | SGD17.30 |
| 500 + | SGD1.681 | SGD16.81 |
*price indicative
- RS Stock No.:
- 221-6720
- Mfr. Part No.:
- NTMFS005N10MCLT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 105A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | DFN | |
| Series | NTMFS005N | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.1 mm | |
| Height | 6.3mm | |
| Standards/Approvals | Beryllium Free, Pb-Free, RoHS | |
| Length | 5.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 105A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type DFN | ||
Series NTMFS005N | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Operating Temperature 175°C | ||
Width 1.1 mm | ||
Height 6.3mm | ||
Standards/Approvals Beryllium Free, Pb-Free, RoHS | ||
Length 5.3mm | ||
Automotive Standard No | ||
The ON Semiconductor industrial power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
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