Infineon CoolMOS Type N-Channel MOSFET & Diode, 51 A, 650 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 220-7406
- Mfr. Part No.:
- IPD60R170CFD7ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
SGD4,375.00
(exc. GST)
SGD4,775.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 15 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | SGD1.75 | SGD4,375.00 |
| 5000 - 5000 | SGD1.698 | SGD4,245.00 |
| 7500 + | SGD1.647 | SGD4,117.50 |
*price indicative
- RS Stock No.:
- 220-7406
- Mfr. Part No.:
- IPD60R170CFD7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
Related links
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-252 IPD60R170CFD7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 IPD60R280P7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 IPD60R280CFD7ATMA1