Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 80 A, 100 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

SGD2,127.00

(exc. GST)

SGD2,318.00

(inc. GST)

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Temporarily out of stock
  • Shipping from 05 January 2027
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Units
Per unit
Per Reel*
1000 - 1000SGD2.127SGD2,127.00
2000 - 2000SGD2.09SGD2,090.00
3000 - 5000SGD2.035SGD2,035.00
6000 - 11000SGD1.929SGD1,929.00
12000 +SGD1.728SGD1,728.00

*price indicative

RS Stock No.:
220-7381
Mfr. Part No.:
IPB065N10N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and figure of merit.

Excellent switching performance

World’s lowest R DS(on)

Very low Q g and Q gd

Excellent gate charge x R DS(on) product (FOM)

Environmentally friendly

Increased efficiency

Highest power density

Less paralleling required

Smallest board-space consumption

Easy-to-design products

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