Infineon HEXFET Type N-Channel MOSFET, 71 A, 60 V, 3-Pin IPAK
- RS Stock No.:
- 218-3125
- Mfr. Part No.:
- IRFU7546PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 75 units)*
SGD59.25
(exc. GST)
SGD64.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 05 January 2027
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Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 150 | SGD0.79 | SGD59.25 |
| 225 - 300 | SGD0.778 | SGD58.35 |
| 375 - 675 | SGD0.757 | SGD56.78 |
| 750 - 1425 | SGD0.717 | SGD53.78 |
| 1500 + | SGD0.642 | SGD48.15 |
*price indicative
- RS Stock No.:
- 218-3125
- Mfr. Part No.:
- IRFU7546PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 71A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | IPAK | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.9mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 99W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.39 mm | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 71A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type IPAK | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.9mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 99W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Operating Temperature 175°C | ||
Width 2.39 mm | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon HEXFET series N-Channel power MOSFET. It is used for applications where switching is below <100KHz.
Lead-free, RoHS compliant
Enhanced body diode dV/dt and dI/dt capability
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V, 3-Pin IPAK IRFU7546PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IRFR7546TRPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin IPAK