Infineon CoolMOS Type N-Channel MOSFET, 70 A, 100 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

SGD2,033.00

(exc. GST)

SGD2,216.00

(inc. GST)

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Units
Per unit
Per Reel*
1000 - 1000SGD2.033SGD2,033.00
2000 - 2000SGD1.955SGD1,955.00
3000 +SGD1.93SGD1,930.00

*price indicative

RS Stock No.:
217-2507
Mfr. Part No.:
IPB70N10S312ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

100V

Series

CoolMOS

Package Type

TO-263

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11.3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

129W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

150°C

Width

9.45 mm

Height

4.57mm

Length

10.31mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon 100V, N-Ch, 11.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green product (RoHS compliant)

100% Avalanche tested

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