Infineon CoolMOS C7 Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 214-9118
- Mfr. Part No.:
- IPW65R125C7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
SGD143.37
(exc. GST)
SGD156.27
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 240 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | SGD4.779 | SGD143.37 |
| 90 - 120 | SGD4.703 | SGD141.09 |
| 150 - 270 | SGD4.579 | SGD137.37 |
| 300 - 570 | SGD4.338 | SGD130.14 |
| 600 + | SGD3.882 | SGD116.46 |
*price indicative
- RS Stock No.:
- 214-9118
- Mfr. Part No.:
- IPW65R125C7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 101W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 101W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Easy to use/drive
Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Related links
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW65R125C7XKSA1
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247