Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223
- RS Stock No.:
- 214-4401
- Mfr. Part No.:
- IPN80R1K4P7ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
SGD1,572.00
(exc. GST)
SGD1,713.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 06 October 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | SGD0.524 | SGD1,572.00 |
| 6000 - 6000 | SGD0.504 | SGD1,512.00 |
| 9000 + | SGD0.498 | SGD1,494.00 |
*price indicative
- RS Stock No.:
- 214-4401
- Mfr. Part No.:
- IPN80R1K4P7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | 800V CoolMOS P7 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 7W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series 800V CoolMOS P7 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 7W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Automotive Standard No | ||
The Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
It has fully optimised portfolio
It has lower assembly cost
Related links
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