DiodesZetex Dual DMTH4008LPDW 1 Type N-Channel MOSFET, 46.2 A, 40 V Enhancement, 8-Pin PowerDI5060 DMTH4008LPDW-13
- RS Stock No.:
- 213-9246
- Mfr. Part No.:
- DMTH4008LPDW-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Subtotal (1 pack of 10 units)*
SGD9.60
(exc. GST)
SGD10.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
- Shipping from 14 December 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD0.96 | SGD9.60 |
| 50 - 90 | SGD0.94 | SGD9.40 |
| 100 - 240 | SGD0.838 | SGD8.38 |
| 250 - 990 | SGD0.824 | SGD8.24 |
| 1000 + | SGD0.673 | SGD6.73 |
*price indicative
- RS Stock No.:
- 213-9246
- Mfr. Part No.:
- DMTH4008LPDW-13
- Manufacturer:
- DiodesZetex
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerDI5060 | |
| Series | DMTH4008LPDW | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0123Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Maximum Power Dissipation Pd | 39.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 6.4 mm | |
| Length | 5.15mm | |
| Standards/Approvals | J-STD-020, RoHS, AEC-Q101, UL 94V-0, MIL-STD-202 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerDI5060 | ||
Series DMTH4008LPDW | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0123Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Maximum Power Dissipation Pd 39.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 6.4 mm | ||
Length 5.15mm | ||
Standards/Approvals J-STD-020, RoHS, AEC-Q101, UL 94V-0, MIL-STD-202 | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
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