Vishay SiSS32ADN Type N-Channel MOSFET, 63 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS32ADN-T1-GE3

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Subtotal (1 pack of 10 units)*

SGD22.17

(exc. GST)

SGD24.17

(inc. GST)

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Units
Per unit
Per Pack*
10 - 10SGD2.217SGD22.17
20 - 90SGD2.14SGD21.40
100 - 490SGD2.032SGD20.32
500 - 990SGD1.932SGD19.32
1000 +SGD1.837SGD18.37

*price indicative

Packaging Options:
RS Stock No.:
210-5014
Mfr. Part No.:
SiSS32ADN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212

Series

SiSS32ADN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Maximum Operating Temperature

150°C

Width

3.4 mm

Length

3.4mm

Height

0.83mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK 1212-8S package type with 63 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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