Vishay SiSS30ADN Type N-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS30ADN-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

SGD11.40

(exc. GST)

SGD12.40

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 6,090 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
10 - 10SGD1.14SGD11.40
20 - 90SGD1.099SGD10.99
100 - 490SGD1.043SGD10.43
500 - 990SGD0.991SGD9.91
1000 +SGD0.943SGD9.43

*price indicative

Packaging Options:
RS Stock No.:
210-5011
Mfr. Part No.:
SiSS30ADN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

54.7A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212

Series

SiSS30ADN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

57W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Height

0.83mm

Standards/Approvals

No

Length

3.4mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK 1212-8S package type with 54.7 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

Related links