Vishay SISS30DN N channel-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS30DN-T1-BE3
- RS Stock No.:
- 736-352
- Mfr. Part No.:
- SISS30DN-T1-BE3
- Manufacturer:
- Vishay
N
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | SGD2.02 |
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| 100 - 499 | SGD0.67 |
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- RS Stock No.:
- 736-352
- Mfr. Part No.:
- SISS30DN-T1-BE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54.7A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SISS30DN | |
| Package Type | PowerPAK 1212-8S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00825Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54.7A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SISS30DN | ||
Package Type PowerPAK 1212-8S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00825Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET designed for efficient synchronous rectification and power conversion applications. It delivers excellent performance stability in demanding environments.
TrenchFET Gen IV technology enhances electrical efficiency
Very low on-resistance minimises energy losses during operation
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