Texas Instruments NexFET Type N-Channel MOSFET, 3 A, 30 V Enhancement, 8-Pin VSONP CSD17575Q3
- RS Stock No.:
- 208-8480
- Mfr. Part No.:
- CSD17575Q3
- Manufacturer:
- Texas Instruments
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD14.92
(exc. GST)
SGD16.26
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 22,810 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.492 | SGD14.92 |
| 50 - 90 | SGD1.418 | SGD14.18 |
| 100 - 240 | SGD1.345 | SGD13.45 |
| 250 - 990 | SGD1.276 | SGD12.76 |
| 1000 + | SGD1.212 | SGD12.12 |
*price indicative
- RS Stock No.:
- 208-8480
- Mfr. Part No.:
- CSD17575Q3
- Manufacturer:
- Texas Instruments
Specifications
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | VSONP | |
| Series | NexFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 108W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4 mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type VSONP | ||
Series NexFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 108W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 3.4 mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 1mm | ||
Automotive Standard No | ||
-
-
Related links
- Texas Instruments NexFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin VSONP CSD17484F4
- Texas Instruments NexFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 16 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 16 V Enhancement, 8-Pin VSONP CSD16403Q5A
- Texas Instruments NexFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin VSONP CSD19534Q5A
