STMicroelectronics STN6N60M2 Type N-Channel MOSFET, 5.5 A, 25 V Enhancement, 3-Pin SOT-223 STN6N60M2
- RS Stock No.:
- 204-9959
- Mfr. Part No.:
- STN6N60M2
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 25 units)*
SGD23.00
(exc. GST)
SGD25.00
(inc. GST)
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In Stock
- Plus 2,900 unit(s) shipping from 23 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.92 | SGD23.00 |
| 50 - 75 | SGD0.874 | SGD21.85 |
| 100 - 475 | SGD0.83 | SGD20.75 |
| 500 - 1975 | SGD0.789 | SGD19.73 |
| 2000 + | SGD0.749 | SGD18.73 |
*price indicative
- RS Stock No.:
- 204-9959
- Mfr. Part No.:
- STN6N60M2
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | STN6N60M2 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.25Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.48 mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Length | 6.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series STN6N60M2 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.25Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Width 6.48 mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Length 6.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Extremely low gate charge
Excellent output capacitance (Coss) profile
100% avalanche tested
Zener-protected
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