Vishay Dual SiSF06DN 2 Type N-Channel MOSFET, 101 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISF06DN-T1-GE3
- RS Stock No.:
- 204-7260
- Mfr. Part No.:
- SISF06DN-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD29.84
(exc. GST)
SGD32.52
(inc. GST)
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- Shipping from 13 July 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | SGD1.492 | SGD29.84 |
| 100 - 480 | SGD1.358 | SGD27.16 |
| 500 - 980 | SGD1.243 | SGD24.86 |
| 1000 - 1480 | SGD1.147 | SGD22.94 |
| 1500 + | SGD1.065 | SGD21.30 |
*price indicative
- RS Stock No.:
- 204-7260
- Mfr. Part No.:
- SISF06DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 101A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiSF06DN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0045Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69.4W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Height | 0.73mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 101A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiSF06DN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0045Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69.4W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Height 0.73mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
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Very low source-to-source on resistance
TrenchFET Gen IV power MOSFET
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