STMicroelectronics M6 Type N-Channel MOSFET, 11 A, 600 V, 5-Pin PowerFlat HV STL19N60M6
- RS Stock No.:
- 203-3439
- Mfr. Part No.:
- STL19N60M6
- Manufacturer:
- STMicroelectronics
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SGD5.72
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SGD6.23
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Units | Per unit |
|---|---|
| 1 - 49 | SGD5.72 |
| 50 - 99 | SGD5.45 |
| 100 - 249 | SGD5.18 |
| 250 - 999 | SGD4.94 |
| 1000 + | SGD4.70 |
*price indicative
- RS Stock No.:
- 203-3439
- Mfr. Part No.:
- STL19N60M6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | M6 | |
| Package Type | PowerFlat HV | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 308mΩ | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 90W | |
| Typical Gate Charge Qg @ Vgs | 16.8nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.1mm | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Width | 0.95 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series M6 | ||
Package Type PowerFlat HV | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 308mΩ | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 90W | ||
Typical Gate Charge Qg @ Vgs 16.8nC | ||
Maximum Operating Temperature 175°C | ||
Height 8.1mm | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Width 0.95 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel MDmesh M6 Power MOSFET incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. Previous generation of MDmesh devices through its new M6 technology, is built by STMicroelectronics. This combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Low gate input resistance
100% avalanche tested
Zener-protected
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