onsemi NTB N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 7-Pin TO-263 NTBG040N120SC1
- RS Stock No.:
- 202-5690
- Mfr. Part No.:
- NTBG040N120SC1
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
SGD131.70
(exc. GST)
SGD143.55
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Supply shortage
- Plus 325 left, shipping from 05 October 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD26.34 | SGD131.70 |
| 50 - 195 | SGD25.788 | SGD128.94 |
| 200 - 395 | SGD25.244 | SGD126.22 |
| 400 + | SGD24.71 | SGD123.55 |
*price indicative
- RS Stock No.:
- 202-5690
- Mfr. Part No.:
- NTBG040N120SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.7V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Power Dissipation Pd | 357W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Length | 10.2mm | |
| Height | 15.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.7V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Power Dissipation Pd 357W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Length 10.2mm | ||
Height 15.7mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.
40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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