STMicroelectronics ST Type N-Channel MOSFET, 30 A, 600 V Depletion, 3-Pin TO-220
- RS Stock No.:
- 202-5511
- Mfr. Part No.:
- STF36N60M6
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD373.85
(exc. GST)
SGD407.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 150 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD7.477 | SGD373.85 |
| 100 - 200 | SGD7.327 | SGD366.35 |
| 250 - 450 | SGD7.181 | SGD359.05 |
| 500 - 950 | SGD7.037 | SGD351.85 |
| 1000 + | SGD6.896 | SGD344.80 |
*price indicative
- RS Stock No.:
- 202-5511
- Mfr. Part No.:
- STF36N60M6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | ST | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.085Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 44.3nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 30.6mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series ST | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.085Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 44.3nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 30.6mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
The STMicroelectronics new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology.
Low gate input resistance
100% avalanche tested
Zener-protected
Related links
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