Vishay TrenchFET Gen IV N-Channel MOSFET, 110 A, 45 V Enhancement, 8-Pin SO-8 SIR150DP-T1-RE3

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Subtotal (1 pack of 50 units)*

SGD64.45

(exc. GST)

SGD70.25

(inc. GST)

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Units
Per unit
Per Pack*
50 - 50SGD1.289SGD64.45
100 - 450SGD1.172SGD58.60
500 - 950SGD1.074SGD53.70
1000 - 1450SGD0.992SGD49.60
1500 +SGD0.921SGD46.05

*price indicative

RS Stock No.:
200-6845
Mfr. Part No.:
SIR150DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

45V

Package Type

SO-8

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.97mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.7W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Length

5.15mm

Height

6.15mm

Width

5.15mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SIR150DP-T1-RE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

45 V Drain-source break-down voltage

Tuned for low Qg and Qoss

100 % Rg and UIS tested

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