Vishay SQJA36EP Type N-Channel MOSFET, 350 A, 40 V Enhancement, 4-Pin SO-8
- RS Stock No.:
- 200-6823
- Mfr. Part No.:
- SQJA36EP-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD56.80
(exc. GST)
SGD61.90
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 18 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | SGD2.272 | SGD56.80 |
| 100 - 475 | SGD2.226 | SGD55.65 |
| 500 - 975 | SGD2.182 | SGD54.55 |
| 1000 - 1475 | SGD2.138 | SGD53.45 |
| 1500 + | SGD2.096 | SGD52.40 |
*price indicative
- RS Stock No.:
- 200-6823
- Mfr. Part No.:
- SQJA36EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 350A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SQJA36EP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.24mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 107nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.2mm | |
| Standards/Approvals | No | |
| Height | 6.25mm | |
| Width | 1.1 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 350A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SQJA36EP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.24mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 107nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Operating Temperature 150°C | ||
Length 4.2mm | ||
Standards/Approvals No | ||
Height 6.25mm | ||
Width 1.1 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQJA36EP-T1_GE3 is a automotive N-channel 40V (D-S) 175°C MOSFET.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Qgd/Qgs ratio < 1 optimizes switching
characteristics
Related links
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