Vishay EF Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220 SIHP186N60EF-GE3

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Subtotal (1 reel of 50 units)*

SGD203.20

(exc. GST)

SGD221.50

(inc. GST)

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In Stock
  • 950 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
50 - 100SGD4.064SGD203.20
150 - 200SGD3.912SGD195.60
250 +SGD3.667SGD183.35

*price indicative

RS Stock No.:
200-6818
Mfr. Part No.:
SIHP186N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

650V

Series

EF

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

193mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32nC

Maximum Power Dissipation Pd

156W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

14.4mm

Length

10.52mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SIHP186N60EF-GE3 is a EF series power MOSFET with fast body diode.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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