Vishay TrenchFET Gen IV Type P-Channel MOSFET, 18.3 A, 30 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 200-6797
- Mfr. Part No.:
- Si4425FDY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD42.35
(exc. GST)
SGD46.15
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 6,650 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | SGD0.847 | SGD42.35 |
| 100 - 450 | SGD0.771 | SGD38.55 |
| 500 - 950 | SGD0.706 | SGD35.30 |
| 1000 - 1450 | SGD0.652 | SGD32.60 |
| 1500 + | SGD0.605 | SGD30.25 |
*price indicative
- RS Stock No.:
- 200-6797
- Mfr. Part No.:
- Si4425FDY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET Gen IV | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 4.8W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET Gen IV | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 4.8W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Si4425FDY-T1-GE3 is a P-channel 30V (D-S) MOSFET.
TrenchFET Gen IV p-channel power MOSFET
100% Rg tested
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