onsemi NTMFS Type N-Channel MOSFET, 235 A, 60 V Enhancement, 8-Pin PQFN NTMFSC1D6N06CL
- RS Stock No.:
- 195-8747
- Mfr. Part No.:
- NTMFSC1D6N06CL
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD22.15
(exc. GST)
SGD24.14
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 150 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD2.215 | SGD22.15 |
| 100 - 490 | SGD2.013 | SGD20.13 |
| 500 - 990 | SGD1.851 | SGD18.51 |
| 1000 - 1490 | SGD1.828 | SGD18.28 |
| 1500 + | SGD1.806 | SGD18.06 |
*price indicative
- RS Stock No.:
- 195-8747
- Mfr. Part No.:
- NTMFSC1D6N06CL
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 235A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PQFN | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 166W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 235A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PQFN | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 166W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Width 5 mm | ||
Automotive Standard No | ||
This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Top and bottom sided exposed in standard 5x6mm pin-out
Improved thermal dissipation through top and bottom side of the package
Ultra low RDS-on
Reduced conduction loss
Reduced capacitances and package inductance
Reduced switching loss
Applications
Synchronous Rectifier in AC-DC and DC-DC power supplies
Motor Switch
Load switch
Related links
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