onsemi Dual 2 Type N-Channel Power MOSFET, 74 A, 80 V Enhancement, 8-Pin DFN
- RS Stock No.:
- 195-2670
- Mfr. Part No.:
- NVMFD6H840NLWFT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Subtotal (1 reel of 1500 units)*
SGD2,850.00
(exc. GST)
SGD3,105.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 + | SGD1.90 | SGD2,850.00 |
*price indicative
- RS Stock No.:
- 195-2670
- Mfr. Part No.:
- NVMFD6H840NLWFT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.1W | |
| Minimum Operating Temperature | 175°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Height | 1.05mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.1W | ||
Minimum Operating Temperature 175°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Height 1.05mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
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