onsemi NTMJS1D5N04CL Type N-Channel MOSFET, 200 A, 40 V Enhancement, 8-Pin LFPAK NTMJS1D5N04CLTWG
- RS Stock No.:
- 195-2505
- Mfr. Part No.:
- NTMJS1D5N04CLTWG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD60.04
(exc. GST)
SGD65.44
(inc. GST)
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- Shipping from 09 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | SGD3.002 | SGD60.04 |
| 100 - 480 | SGD2.73 | SGD54.60 |
| 500 - 980 | SGD2.519 | SGD50.38 |
| 1000 - 1480 | SGD2.487 | SGD49.74 |
| 1500 + | SGD2.454 | SGD49.08 |
*price indicative
- RS Stock No.:
- 195-2505
- Mfr. Part No.:
- NTMJS1D5N04CLTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMJS1D5N04CL | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMJS1D5N04CL | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
These Devices are Pb−Free
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