onsemi NVTFS015N04C N-Channel MOSFET, 27 A, 40 V Enhancement, 8-Pin WDFN NVTFS015N04CTAG
- RS Stock No.:
- 189-0479
- Mfr. Part No.:
- NVTFS015N04CTAG
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (25 units, in packs of 25)*
SGD33.50
(exc. GST)
SGD36.50
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Supply shortage
- 1,350 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD1.34 | SGD33.50 |
| 50 - 475 | SGD1.31 | SGD32.75 |
| 500 - 975 | SGD1.074 | SGD26.85 |
| 1000 - 2475 | SGD1.062 | SGD26.55 |
| 2500 + | SGD1.051 | SGD26.28 |
*price indicative
- RS Stock No.:
- 189-0479
- Mfr. Part No.:
- NVTFS015N04CTAG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVTFS015N04C | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Maximum Power Dissipation Pd | 23W | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.15mm | |
| Standards/Approvals | No | |
| Height | 750μm | |
| Length | 3.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVTFS015N04C | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Maximum Power Dissipation Pd 23W | ||
Maximum Operating Temperature 175°C | ||
Width 3.15mm | ||
Standards/Approvals No | ||
Height 750μm | ||
Length 3.15mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wet table Flank Option available for Enhanced Optical Inspection.
Small Footprint (5x6 mm)
Low RDS(on)
Low QG and Capacitance
NVMFS5C404NLWF - Wettable Flank Optic
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Solenoid Driver - ABS, Fuel injection
Motor Control - EPS, Wipers, Fans, Seats, etc.
Load Switch - ECU, Chassis, Body
Related links
- onsemi NVTFS015N04C N-Channel MOSFET 40 V Enhancement, 8-Pin WDFN
- Vishay SiR416DP N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIR416DP-T1-GE3
- onsemi Dual 2 N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN NVMFD5C478NT1G
- onsemi Dual 2 N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- ROHM RQ3 Type P-Channel MOSFET 40 V Enhancement, 8-Pin HSMT-8 RQ3G270BJFRATCB
- ROHM RQ3 N-Channel MOSFET 100 V Enhancement, 8-Pin HSMT-8 RQ3P270BKFRATCB
- onsemi NTMYS021N06CL N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK NTMYS021N06CLTWG
- onsemi NVMYS021N06CL N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK NVMYS021N06CLTWG
