STMicroelectronics MOSFET Enhancement, 3-Pin TO-220 STGP8NC60KD
- RS Stock No.:
- 188-8476
- Mfr. Part No.:
- STGP8NC60KD
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD14.91
(exc. GST)
SGD16.25
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.491 | SGD14.91 |
| 20 - 90 | SGD1.417 | SGD14.17 |
| 100 - 490 | SGD1.347 | SGD13.47 |
| 500 - 990 | SGD1.279 | SGD12.79 |
| 1000 + | SGD1.215 | SGD12.15 |
*price indicative
- RS Stock No.:
- 188-8476
- Mfr. Part No.:
- STGP8NC60KD
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.1V | |
| Maximum Power Dissipation Pd | 65W | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.1V | ||
Maximum Power Dissipation Pd 65W | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Height 15.75mm | ||
Automotive Standard No | ||
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Lower on voltage drop (VCE(sat))
Very soft ultra fast recovery antiparallel diode
Lower CRES / CIES ratio (no cross-conduction susceptibility)
Short circuit withstand time 10μs
Applications
High frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
Related links
- STMicroelectronics MOSFET Enhancement, 3-Pin TO-220
- STMicroelectronics STripFET H7 Type N-Channel Power MOSFET 100 V Enhancement, 3-Pin TO-220 STP310N10F7
- STMicroelectronics STripFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- STMicroelectronics STripFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics STripFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics STP Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP80N600K6