Vishay SiSS26LDN Type N-Channel MOSFET, 81.2 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SISS26LDN-T1-GE3
- RS Stock No.:
- 188-5033
- Mfr. Part No.:
- SISS26LDN-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD14.75
(exc. GST)
SGD16.08
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 28 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.475 | SGD14.75 |
| 50 - 90 | SGD1.455 | SGD14.55 |
| 100 - 490 | SGD1.233 | SGD12.33 |
| 500 - 990 | SGD1.113 | SGD11.13 |
| 1000 + | SGD0.949 | SGD9.49 |
*price indicative
- RS Stock No.:
- 188-5033
- Mfr. Part No.:
- SISS26LDN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 81.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSS26LDN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 31.5nC | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3 mm | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Height | 0.78mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 81.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212 | ||
Series SiSS26LDN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 31.5nC | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.3 mm | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Height 0.78mm | ||
Automotive Standard No | ||
N-Channel 60 V (D-S) MOSFET.
TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
Related links
- Vishay SiSS26LDN Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSHA10DN Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSS76LDN Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212
- Vishay ThunderFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSS30LDN Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiS126DN Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212