Vishay SiSS26LDN Type N-Channel MOSFET, 81.2 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SISS26LDN-T1-GE3

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Subtotal (1 pack of 10 units)*

SGD14.75

(exc. GST)

SGD16.08

(inc. GST)

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Units
Per unit
Per Pack*
10 - 40SGD1.475SGD14.75
50 - 90SGD1.455SGD14.55
100 - 490SGD1.233SGD12.33
500 - 990SGD1.113SGD11.13
1000 +SGD0.949SGD9.49

*price indicative

Packaging Options:
RS Stock No.:
188-5033
Mfr. Part No.:
SISS26LDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

81.2A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212

Series

SiSS26LDN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

57W

Typical Gate Charge Qg @ Vgs

31.5nC

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

No

Height

0.78mm

Automotive Standard

No

N-Channel 60 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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