Vishay SiSHA14DN Type N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSHA14DN-T1-GE3
- RS Stock No.:
- 188-4957
- Mfr. Part No.:
- SiSHA14DN-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD19.775
(exc. GST)
SGD21.55
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 5,825 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.791 | SGD19.78 |
| 50 - 75 | SGD0.752 | SGD18.80 |
| 100 - 475 | SGD0.714 | SGD17.85 |
| 500 - 975 | SGD0.677 | SGD16.93 |
| 1000 + | SGD0.644 | SGD16.10 |
*price indicative
- RS Stock No.:
- 188-4957
- Mfr. Part No.:
- SiSHA14DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSHA14DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 19.4nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 26.5W | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3 mm | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Height | 0.93mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212 | ||
Series SiSHA14DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 19.4nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 26.5W | ||
Maximum Operating Temperature 150°C | ||
Width 3.3 mm | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Height 0.93mm | ||
Automotive Standard No | ||
N-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen IV power MOSFET
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