Vishay SiS126DN Type N-Channel MOSFET, 45.1 A, 80 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

SGD1,992.00

(exc. GST)

SGD2,172.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 +SGD0.664SGD1,992.00

*price indicative

RS Stock No.:
188-4886
Mfr. Part No.:
SIS126DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45.1A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212

Series

SiS126DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

12.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

52W

Typical Gate Charge Qg @ Vgs

21.1nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.15 mm

Length

3.15mm

Height

1.07mm

Automotive Standard

No

N-Channel 80 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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