onsemi N-Channel MOSFET, 477 A, 60 V Enhancement, 8-Pin DFN NVMTS0D7N06CLTXG
- RS Stock No.:
- 185-9234
- Mfr. Part No.:
- NVMTS0D7N06CLTXG
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
SGD35.66
(exc. GST)
SGD38.86
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 1,806 unit(s) shipping from 12 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | SGD17.83 | SGD35.66 |
| 20 - 198 | SGD16.495 | SGD32.99 |
| 200 - 498 | SGD14.39 | SGD28.78 |
| 500 - 998 | SGD13.005 | SGD26.01 |
| 1000 + | SGD11.91 | SGD23.82 |
*price indicative
- RS Stock No.:
- 185-9234
- Mfr. Part No.:
- NVMTS0D7N06CLTXG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 477A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 900μΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 294.6W | |
| Typical Gate Charge Qg @ Vgs | 225nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Standards/Approvals | No | |
| Width | 8mm | |
| Length | 8.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 477A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 900μΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 294.6W | ||
Typical Gate Charge Qg @ Vgs 225nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Standards/Approvals No | ||
Width 8mm | ||
Length 8.1mm | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
- COO (Country of Origin):
- PH
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (8x8 mm)
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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