onsemi NVMFS6D1N08H Type N-Channel MOSFET, 89 A, 80 V Enhancement, 5-Pin DFN NVMFS6D1N08HT1G
- RS Stock No.:
- 185-9150
- Mfr. Part No.:
- NVMFS6D1N08HT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 6 units)*
SGD13.68
(exc. GST)
SGD14.94
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 13,500 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 6 - 54 | SGD2.28 | SGD13.68 |
| 60 - 594 | SGD2.167 | SGD13.00 |
| 600 - 2994 | SGD2.058 | SGD12.35 |
| 3000 - 5994 | SGD1.955 | SGD11.73 |
| 6000 + | SGD1.855 | SGD11.13 |
*price indicative
- RS Stock No.:
- 185-9150
- Mfr. Part No.:
- NVMFS6D1N08HT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 89A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Series | NVMFS6D1N08H | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 5.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Length | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 89A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Series NVMFS6D1N08H | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 5.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Length 5.1mm | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
- COO (Country of Origin):
- MY
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFSW6D1N08H - Wettable Flank Option for Enhanced Optical Inspection
PPAP capable
These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
Typical Applications
Synchronous Rectification
AC/DC and DC/DC Power Supplies
AC/DC Adapters (USB PD) SR
Load Switch
Related links
- onsemi NVMFS6D1N08H Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi Type N-Channel MOSFET 40 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H800N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H818N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H818N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS5C404NL Type N-Channel MOSFET 40 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H824N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN