onsemi FDWS Type N-Channel MOSFET, 80 A, 100 V Enhancement, 8-Pin DFN FDWS86068-F085
- RS Stock No.:
- 185-9082
- Mfr. Part No.:
- FDWS86068-F085
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 4 units)*
SGD22.812
(exc. GST)
SGD24.864
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 2,984 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 36 | SGD5.703 | SGD22.81 |
| 40 - 396 | SGD5.505 | SGD22.02 |
| 400 - 1996 | SGD5.223 | SGD20.89 |
| 2000 - 3996 | SGD4.963 | SGD19.85 |
| 4000 + | SGD4.713 | SGD18.85 |
*price indicative
- RS Stock No.:
- 185-9082
- Mfr. Part No.:
- FDWS86068-F085
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | DFN | |
| Series | FDWS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Width | 6.3 mm | |
| Length | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type DFN | ||
Series FDWS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Width 6.3 mm | ||
Length 5.1mm | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
- COO (Country of Origin):
- PH
N-Channel PowerTrench® MOSFET 100V, 80A, 4.5mΩ
Typical RDS(on) = 5.2 mΩ at VGS = 10 V, ID = 80 A
Typical Qg(tot) = 31 nC at VGS = 10 V, ID = 80 A
UIS Capability
These Devices are Pb−Free
Wettable Flanks for Automatic Optical Inspection (AOI)
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Electronic Steering
Related links
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