Vishay Single 1 Type P-Channel MOSFET, 1.8 A, 400 V, 3-Pin TO-252
- RS Stock No.:
- 180-8772
- Mfr. Part No.:
- IRFR9310PBF
- Manufacturer:
- Vishay
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.958 | SGD9.58 |
| 20 - 50 | SGD0.935 | SGD9.35 |
| 60 + | SGD0.865 | SGD8.65 |
*price indicative
- RS Stock No.:
- 180-8772
- Mfr. Part No.:
- IRFR9310PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-252 | |
| Mount Type | Surface, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7Ω | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Length | 9.65mm | |
| Standards/Approvals | RoHS-compliant | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-252 | ||
Mount Type Surface, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7Ω | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Length 9.65mm | ||
Standards/Approvals RoHS-compliant | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET, 400V Maximum Drain Source Voltage, 1.8A Maximum Continuous Drain Current - IRFR9310PBF
This MOSFET is a P-channel power transistor designed for high-voltage switching and control tasks in industrial electronic systems. It is intended for surface-mount or through-hole mounting and offers a single-element transistor configuration suitable for discrete power stages. The device operates across a wide temperature range and is rated for moderate continuous current, making it applicable where Compact high-voltage switching is required.
Features and Benefits:
• 400V drain-to-source capability enabling high-voltage applications
• 7Ω on-resistance for predictable conduction losses
• 1.8A continuous current supporting moderate load currents
• 50W power dissipation for substantial thermal handling
• 13nC typical gate charge for manageable switching control
• 20V maximum gate drive allowing flexible gate-drive design
• 7Ω on-resistance for predictable conduction losses
• 1.8A continuous current supporting moderate load currents
• 50W power dissipation for substantial thermal handling
• 13nC typical gate charge for manageable switching control
• 20V maximum gate drive allowing flexible gate-drive design
Applications
• Suitable for high-voltage power switching in industrial automation
• Ideal for P-channel load switching in power-supply topologies
• Used for discrete transistor stages in motor-control electronics
• Can be used for protection and isolation circuits in electrical systems
• Ideal for P-channel load switching in power-supply topologies
• Used for discrete transistor stages in motor-control electronics
• Can be used for protection and isolation circuits in electrical systems
What package styles are available for PCB mounting or prototyping?
The device is supplied in a TO-252 package and supports both surface-mount and through-hole assembly options to suit different board layouts and prototyping needs.
How does thermal performance affect installation choices?
With a maximum junction temperature of 150°C and 50W dissipation rating, adequate thermal management such as heatsinking or copper area should be included to maintain safe operating temperatures under sustained loads.
What gate-drive limits must be observed when designing control circuitry?
The gate-source voltage must not exceed 20V, so gate drivers and level-shifting circuitry should be specified to remain within this threshold.
Are there environmental or regulatory considerations for use in assemblies?
The component is RoHS-compliant, permitting its use in assemblies where restricted substance directives apply.
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