Vishay Single 1 Type N-Channel MOSFET, 5.5 A, 400 V IRF730ASPBF
- RS Stock No.:
- 180-8303
- Mfr. Part No.:
- IRF730ASPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD101.85
(exc. GST)
SGD111.00
(inc. GST)
Add 100 units to get free delivery
In Stock
- Plus 100 unit(s) shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD2.037 | SGD101.85 |
| 100 - 450 | SGD1.994 | SGD99.70 |
| 500 - 950 | SGD1.935 | SGD96.75 |
| 1000 - 1950 | SGD1.877 | SGD93.85 |
| 2000 + | SGD1.82 | SGD91.00 |
*price indicative
- RS Stock No.:
- 180-8303
- Mfr. Part No.:
- IRF730ASPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Maximum Power Dissipation Pd | 74W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Width | 10.67 mm | |
| Height | 4.83mm | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Length | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 400V | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Maximum Power Dissipation Pd 74W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Width 10.67 mm | ||
Height 4.83mm | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Length 9.65mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 400V and maximum gate-source voltage of 30V. It has a drain-source resistance of 10mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 74W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Fully characterized capacitance and avalanche voltage and current
• Halogen and lead (Pb) free component
• Improved gate, avalanche and dynamic dV/dt
• Low gate charge Qg results in simple drive requirement
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies
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