Vishay TrenchFET Type N-Channel Power MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8 SI4900DY-T1-E3
- RS Stock No.:
- 180-8002
- Mfr. Part No.:
- SI4900DY-T1-E3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD11.97
(exc. GST)
SGD13.05
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 6,990 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.197 | SGD11.97 |
| 50 - 90 | SGD1.136 | SGD11.36 |
| 100 - 490 | SGD1.079 | SGD10.79 |
| 500 - 990 | SGD1.026 | SGD10.26 |
| 1000 + | SGD0.975 | SGD9.75 |
*price indicative
- RS Stock No.:
- 180-8002
- Mfr. Part No.:
- SI4900DY-T1-E3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.058Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Length | 4.8mm | |
| Height | 1.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.058Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 3.1W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Length 4.8mm | ||
Height 1.35mm | ||
Automotive Standard No | ||
The Vishay Siliconix SI4900DY series TrenchFET dual N channel power MOSFET has drain to source voltage of 60 V. It is used in LCD TV and CCFL inverter.
Pb-free
Halogen free
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