Vishay Dual SI7216DN Type N-Channel MOSFET, 6.5 A, 40 V Enhancement, 8-Pin PowerPack SI7216DN-T1-E3
- RS Stock No.:
- 180-7922
- Mfr. Part No.:
- SI7216DN-T1-E3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD13.16
(exc. GST)
SGD14.345
(inc. GST)
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In Stock
- Plus 2,915 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD2.632 | SGD13.16 |
| 50 - 95 | SGD2.576 | SGD12.88 |
| 100 - 495 | SGD2.498 | SGD12.49 |
| 500 - 995 | SGD2.424 | SGD12.12 |
| 1000 + | SGD2.352 | SGD11.76 |
*price indicative
- RS Stock No.:
- 180-7922
- Mfr. Part No.:
- SI7216DN-T1-E3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPack | |
| Series | SI7216DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.5nC | |
| Maximum Power Dissipation Pd | 20.8W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Width | 3.4 mm | |
| Length | 3.4mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPack | ||
Series SI7216DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.5nC | ||
Maximum Power Dissipation Pd 20.8W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -50°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Width 3.4 mm | ||
Length 3.4mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SI7216DN is a dual N-channel MOSFET having drain to source(Vds) voltage of 40V.The gate to source voltage(VGS) is 20V. It is having power PAK 1212-8 package. It offers drain to source resistance (RDS.) 0.032ohms at 10VGS and 0.039ohms at 4.5VGS. Maximum drain current 6A.
Trench FET power MOSFET
Low thermal resistance Power PAK package with small size and low 1.07 mm profile
100 % Rg and UIS tested
Compliant to RoHS directive 2002/95/EC
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