Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3
- RS Stock No.:
- 180-7886
- Mfr. Part No.:
- SI7956DP-T1-GE3
- Manufacturer:
- Vishay
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SGD24.30
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SGD26.50
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In Stock
- 2,920 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD4.86 | SGD24.30 |
| 50 - 95 | SGD4.35 | SGD21.75 |
| 100 - 495 | SGD3.554 | SGD17.77 |
| 500 - 995 | SGD3.086 | SGD15.43 |
| 1000 + | SGD3.048 | SGD15.24 |
*price indicative
- RS Stock No.:
- 180-7886
- Mfr. Part No.:
- SI7956DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SI7956DP | |
| Package Type | PowerPack | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 3.5W | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SI7956DP | ||
Package Type PowerPack | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 3.5W | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SI7956DP Series MOSFET, 150V Drain Source Voltage, 4.1A Continuous Drain Current - SI7956DP-T1-GE3
This dual N-channel MOSFET is a surface-mount switching device designed for high-voltage power applications in industrial and electronic systems. It delivers controlled conduction for load switching and power conversion tasks, operating across a wide ambient range and intended for board-level integration where compact, dual-transistor solutions are required.
Features and Benefits:
• 150V drain tolerance enables high-voltage switching capabilities • 4.1A continuous drain current supports moderate load currents • 0.1Ω Rds(on) minimises conduction losses for improved efficiency • 17nC typical gate charge allows predictable switching behaviour • 3.5W power dissipation manages thermal load in Compact assemblies
Applications
• Suitable for DC-DC converter stages in automation equipment • Ideal for motor driver half-bridge circuits in control panels • Used for switched-mode power supplies in industrial electronics • Can be used for power distribution switches on Compact PCBs
What are the allowable gate and drain voltages for safe operation?
The gate may be driven up to 20V and the device withstands drain-source voltages up to 150V.
What thermal extremes can the device tolerate during operation?
It is rated for continuous use from -50°C up to a maximum operating temperature of 150°C.
How many pins and what package type should be expected for PCB layout?
The component is supplied as an 8-pin PowerPack surface-mount device suited to standard land patterns.
How does the dual configuration affect circuit implementation?
Two transistors are provided in a single package, enabling Compact paired-switch arrangements and simplified board routing.
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