Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

RS Stock No.:: 180-7886
Mfr. Part No.:: SI7956DP-T1-GE3
Manufacturer:: Vishay

Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

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Subtotal (1 pack of 5 units)*

SGD24.30

(exc. GST)

SGD26.50

(inc. GST)

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In Stock

Plus 3,000 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
5 - 45	SGD4.86	SGD24.30
50 - 95	SGD4.35	SGD21.75
100 - 495	SGD3.554	SGD17.77
500 - 995	SGD3.086	SGD15.43
1000 +	SGD3.048	SGD15.24

*price indicative

RS Stock No.:: 180-7886
Mfr. Part No.:: SI7956DP-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	150V
	Package Type	PowerPack
	Series	SI7956DP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	17nC
	Minimum Operating Temperature	-50°C
	Maximum Power Dissipation Pd	3.5W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Height	1.12mm
	Length	6.25mm
	Width	5.26 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 150V
	Package Type PowerPack
	Series SI7956DP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 17nC
	Minimum Operating Temperature -50°C
	Maximum Power Dissipation Pd 3.5W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Height 1.12mm
	Length 6.25mm
	Width 5.26 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 105mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.5W and continuous drain current of 4.1A. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Dual MOSFET for space savings

• Halogen free

• Lead (Pb) free component

• Low on-resistance in new low thermal resistance PowerPAK package

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Half bridge and forward converters

• High efficiency primary side switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested