Vishay Type N-Channel MOSFET, 4.8 A, 150 V, 8-Pin PowerPAK SO-8 SI7898DP-T1-E3

RS Stock No.:: 180-7862
Mfr. Part No.:: SI7898DP-T1-E3
Manufacturer:: Vishay

Vishay Type N-Channel MOSFET, 4.8 A, 150 V, 8-Pin PowerPAK SO-8 SI7898DP-T1-E3

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Subtotal (1 pack of 5 units)*

SGD10.88

(exc. GST)

SGD11.86

(inc. GST)

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Last RS stock

Final 2,590 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
5 - 45	SGD2.176	SGD10.88
50 - 95	SGD2.132	SGD10.66
100 - 495	SGD2.07	SGD10.35
500 - 995	SGD2.006	SGD10.03
1000 +	SGD1.944	SGD9.72

*price indicative

RS Stock No.:: 180-7862
Mfr. Part No.:: SI7898DP-T1-E3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.8A
	Maximum Drain Source Voltage Vds	150V
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.085Ω
	Maximum Power Dissipation Pd	5W
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Length	6.25mm
	Standards/Approvals	IEC 61249-2-21
	Height	1.12mm
	Width	5.26 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.8A
	Maximum Drain Source Voltage Vds 150V
	Package Type PowerPAK SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.085Ω
	Maximum Power Dissipation Pd 5W
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Length 6.25mm
	Standards/Approvals IEC 61249-2-21
	Height 1.12mm
	Width 5.26 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 85mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 5W and continuous drain current of 4.8A. It has a minimum and a maximum driving voltage of 6V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free component

• New low thermal resistance PowerPAK package with small size and low 1.07mm profile

• Operating temperature ranges between -55°C and 150°C

• PWM optimised

• TrenchFET power MOSFET for fast switching

Applications

• DC/DC power supply primary side switches

• Industrial motor drives

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested