onsemi Dual 2 Type N-Channel Power MOSFET, 70 A, 40 V Enhancement, 8-Pin DFN NVMFD5C462NT1G
- RS Stock No.:
- 178-4454
- Mfr. Part No.:
- NVMFD5C462NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD25.51
(exc. GST)
SGD27.81
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 1,450 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD2.551 | SGD25.51 |
| 100 - 240 | SGD2.423 | SGD24.23 |
| 250 - 490 | SGD2.301 | SGD23.01 |
| 500 - 990 | SGD2.185 | SGD21.85 |
| 1000 + | SGD2.075 | SGD20.75 |
*price indicative
- RS Stock No.:
- 178-4454
- Mfr. Part No.:
- NVMFD5C462NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.86V | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Height | 1.05mm | |
| Length | 5.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.86V | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Height 1.05mm | ||
Length 5.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Low on resistance
High current capability
Benefits
Minimal conduction losses
Robust load performance
Safeguard against voltage overstress failures
Suitable for automotive applications
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
Related links
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN